Monte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes

Document Type : Research Paper

Authors

1 Shahid Chamran University

2 University of Sistan and Baluchestan

Abstract

In this paper, we calculate electron and hole impact
ionization coefficients in In0.52Al0.48As using a Monte Carlo model
which has two valleys and two bands for electrons and holes
respectively. Also, we calculate multiplication factor for electron
and hole initiated multiplication regimes and breakdown voltage
in In0.52Al0.48As PIN avalanche photodiodes. To validate the
model, we compare our simulated results with the experimental
results.

Keywords

International Journal of Communications and Information Technology
Volume 1, Issue 1 - Serial Number 1
December 2011
Pages 21-24

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